Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al x Ga 1− x N back barrier

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2020-04, Vol.59 (4), p.44002
Main Authors: Miyamoto, Hironobu, Okamoto, Yasuhiro, Nakayama, Tatsuo, Kawaguchi, Hiroshi, Fujita, Machiko, Ueda, Takehiro, Sawada, Masami
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ab778a