Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al x Ga 1− x N back barrier

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Published in:Japanese Journal of Applied Physics 2020-04, Vol.59 (4), p.44002
Main Authors: Miyamoto, Hironobu, Okamoto, Yasuhiro, Nakayama, Tatsuo, Kawaguchi, Hiroshi, Fujita, Machiko, Ueda, Takehiro, Sawada, Masami
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cited_by cdi_FETCH-LOGICAL-c90a-a329855cad95f93be1c67194113a77d4ee90579fe84ddc0c5d23cb0e94d4b4843
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container_end_page
container_issue 4
container_start_page 44002
container_title Japanese Journal of Applied Physics
container_volume 59
creator Miyamoto, Hironobu
Okamoto, Yasuhiro
Nakayama, Tatsuo
Kawaguchi, Hiroshi
Fujita, Machiko
Ueda, Takehiro
Sawada, Masami
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doi_str_mv 10.35848/1347-4065/ab778a
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_35848_1347_4065_ab778a</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_35848_1347_4065_ab778a</sourcerecordid><originalsourceid>FETCH-LOGICAL-c90a-a329855cad95f93be1c67194113a77d4ee90579fe84ddc0c5d23cb0e94d4b4843</originalsourceid><addsrcrecordid>eNplkEtOwzAURS0EEqWwAGZvA6F2bMfxsKpKi9TPgMwjf15oIcTIrhDdAWOWyEqaUsSEyfvcq3sHh5BbRu-4LEU5YlyoTNBCjoxVqjRnZPAnnZMBpTnLhM7zS3KV0nP_FlKwAYnVJmLahNbDe2h35gnBhW4XQwuhgS50WUSHKaGHmVnBcv0I8-mySmA6D_-s-2nv2D2MW_joRWDfn1_9tQJr3Es_YtxivCYXjWkT3vzuIan63GSeLdazh8l4kTlNTWZ4rkspnfFaNppbZK5QTAvGuFHKC0RNpdINlsJ7R530OXeWohZeWFEKPiTsVOtiSCliU7_F7auJ-5rR-odZfQRUHwHVJ2b8AEBqXrI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al x Ga 1− x N back barrier</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><source>Institute of Physics (IOP) Electronic Journals</source><creator>Miyamoto, Hironobu ; Okamoto, Yasuhiro ; Nakayama, Tatsuo ; Kawaguchi, Hiroshi ; Fujita, Machiko ; Ueda, Takehiro ; Sawada, Masami</creator><creatorcontrib>Miyamoto, Hironobu ; Okamoto, Yasuhiro ; Nakayama, Tatsuo ; Kawaguchi, Hiroshi ; Fujita, Machiko ; Ueda, Takehiro ; Sawada, Masami</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ab778a</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2020-04, Vol.59 (4), p.44002</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c90a-a329855cad95f93be1c67194113a77d4ee90579fe84ddc0c5d23cb0e94d4b4843</citedby><cites>FETCH-LOGICAL-c90a-a329855cad95f93be1c67194113a77d4ee90579fe84ddc0c5d23cb0e94d4b4843</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Miyamoto, Hironobu</creatorcontrib><creatorcontrib>Okamoto, Yasuhiro</creatorcontrib><creatorcontrib>Nakayama, Tatsuo</creatorcontrib><creatorcontrib>Kawaguchi, Hiroshi</creatorcontrib><creatorcontrib>Fujita, Machiko</creatorcontrib><creatorcontrib>Ueda, Takehiro</creatorcontrib><creatorcontrib>Sawada, Masami</creatorcontrib><title>Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al x Ga 1− x N back barrier</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNplkEtOwzAURS0EEqWwAGZvA6F2bMfxsKpKi9TPgMwjf15oIcTIrhDdAWOWyEqaUsSEyfvcq3sHh5BbRu-4LEU5YlyoTNBCjoxVqjRnZPAnnZMBpTnLhM7zS3KV0nP_FlKwAYnVJmLahNbDe2h35gnBhW4XQwuhgS50WUSHKaGHmVnBcv0I8-mySmA6D_-s-2nv2D2MW_joRWDfn1_9tQJr3Es_YtxivCYXjWkT3vzuIan63GSeLdazh8l4kTlNTWZ4rkspnfFaNppbZK5QTAvGuFHKC0RNpdINlsJ7R530OXeWohZeWFEKPiTsVOtiSCliU7_F7auJ-5rR-odZfQRUHwHVJ2b8AEBqXrI</recordid><startdate>20200401</startdate><enddate>20200401</enddate><creator>Miyamoto, Hironobu</creator><creator>Okamoto, Yasuhiro</creator><creator>Nakayama, Tatsuo</creator><creator>Kawaguchi, Hiroshi</creator><creator>Fujita, Machiko</creator><creator>Ueda, Takehiro</creator><creator>Sawada, Masami</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20200401</creationdate><title>Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al x Ga 1− x N back barrier</title><author>Miyamoto, Hironobu ; Okamoto, Yasuhiro ; Nakayama, Tatsuo ; Kawaguchi, Hiroshi ; Fujita, Machiko ; Ueda, Takehiro ; Sawada, Masami</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c90a-a329855cad95f93be1c67194113a77d4ee90579fe84ddc0c5d23cb0e94d4b4843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Miyamoto, Hironobu</creatorcontrib><creatorcontrib>Okamoto, Yasuhiro</creatorcontrib><creatorcontrib>Nakayama, Tatsuo</creatorcontrib><creatorcontrib>Kawaguchi, Hiroshi</creatorcontrib><creatorcontrib>Fujita, Machiko</creatorcontrib><creatorcontrib>Ueda, Takehiro</creatorcontrib><creatorcontrib>Sawada, Masami</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Miyamoto, Hironobu</au><au>Okamoto, Yasuhiro</au><au>Nakayama, Tatsuo</au><au>Kawaguchi, Hiroshi</au><au>Fujita, Machiko</au><au>Ueda, Takehiro</au><au>Sawada, Masami</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al x Ga 1− x N back barrier</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2020-04-01</date><risdate>2020</risdate><volume>59</volume><issue>4</issue><spage>44002</spage><pages>44002-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.35848/1347-4065/ab778a</doi></addata></record>
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language eng
recordid cdi_crossref_primary_10_35848_1347_4065_ab778a
source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List); Institute of Physics (IOP) Electronic Journals
title Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al x Ga 1− x N back barrier
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T04%3A48%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Threshold%20voltage%20control%20of%20non-recessed%20GaN%20MOS%20HEMTs%20and%20recessed%20GaN%20MOS%20FETs%20by%20Al%20x%20Ga%201%E2%88%92%20x%20N%20back%20barrier&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Miyamoto,%20Hironobu&rft.date=2020-04-01&rft.volume=59&rft.issue=4&rft.spage=44002&rft.pages=44002-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.35848/1347-4065/ab778a&rft_dat=%3Ccrossref%3E10_35848_1347_4065_ab778a%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c90a-a329855cad95f93be1c67194113a77d4ee90579fe84ddc0c5d23cb0e94d4b4843%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true