Diffusion mechanism of fluorine in plasma processing of III-V semiconductor compounds

III-V semiconductors have attracted attention as high mobility channel materials in advanced metal oxide semiconductors. However, there is a possibility that their characteristics deteriorate owing to the damage caused by dry etching when processing the channel material. We focus on dry etching dama...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2020-06, Vol.59 (SJ), p.SJJB01
Main Authors: Kodama, Y., Zaizen, Y., Minari, H., Cho, Y., Fukasawa, M., Kugimiya, K., Nagaoka, K., Iwamoto, H.
Format: Article
Language:English
Subjects:
Activation energy
Damage
Diffusion
Etching
First principles
Fluorine
Group III-V semiconductors
III-V semiconductor
Indium phosphides
injection
Ion bombardment
Ions
knock-on
Metal oxide semiconductors
plasma
Plasma processing
Radicals
Secondary ion mass spectrometry
Semiconductors
Vapor phases
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Summary:III-V semiconductors have attracted attention as high mobility channel materials in advanced metal oxide semiconductors. However, there is a possibility that their characteristics deteriorate owing to the damage caused by dry etching when processing the channel material. We focus on dry etching damage to InP and investigate the diffusion and injection of various elements. Secondary ion mass spectrometry (SIMS) shows that a fluorine atom can easily diffuse into the III-V semiconductor. Furthermore, we investigate the diffusion depths of other elements to determine the activation energies by using first-principles calculations. The SIMS results show the diffusion distance in the bulk InP is strongly correlated with the activation energy. Additionally, radicals containing F can easily diffuse into InP. Therefore, the number of radicals present in the gas phase of the plasma is important. An increase in the adsorption probability of the surface, owing to ion bombardment and knock-on phenomenon, is assumed.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ab82aa