Resist thickness dependence of line width roughness of chemically amplified resists used for electron beam lithography

Transistors have been miniaturized to increase their integration. With miniaturization, the thickness of the patterning material, called a resist, has been decreased to prevent them from collapsing. In this study, the resist thickness dependence of the pattern formation of chemically amplified elect...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2020-08, Vol.59 (8), p.86501
Main Authors: Maeda, Naoki, Konda, Akihiro, Okamoto, Kazumasa, Kozawa, Takahiro, Tamura, Takao
Format: Article
Language:English
Subjects:
Amplification
chemically amplified resist
Dependence
Dissolution
Electron beam lithography
EUV mask
Film thickness
interface
Kinetics
line width roughness
Miniaturization
nanoimprint mold
Patterning
photomask
Resists
Roughness
Substrates
Transistors
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Summary:Transistors have been miniaturized to increase their integration. With miniaturization, the thickness of the patterning material, called a resist, has been decreased to prevent them from collapsing. In this study, the resist thickness dependence of the pattern formation of chemically amplified electron beam resists was investigated. The line width roughness (LWR) of resist patterns increased with the decrease of initial resist film thickness. It was found that the dissolution kinetics depended on the initial resist film thickness. The escape of low-energy electrons to the substrates is considered to have resulted in the difference in the dissolution kinetics and LWR.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ab9fde