Effect of transient behavior on off-state current in poly-Si junctionless nanowire thin-film transistor

For forward sweeping of VGS, the unpredicted negative drain current is observed in our L-type double-gated junctionless transistor. This reveals that in addition to gate-induced drain leakage, there is an another mechanism that causes this negative drain current. According to some measurements, it i...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2020-12, Vol.59 (12), p.126503
Main Authors: Kang, Tsung-Kuei, Hsu, Che-Fu, Liu, Han-Wen, Chien, Feng-Tso, Lin, Cheng-Li
Format: Article
Language:English
Subjects:
gate-induced drain leakage
Hole density
junctionless transistor
Nanowires
negative drain current
Polysilicon
Reduction
Semiconductor devices
steep
Sweeping
Thin films
Transient current
Transistors
transition
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Summary:For forward sweeping of VGS, the unpredicted negative drain current is observed in our L-type double-gated junctionless transistor. This reveals that in addition to gate-induced drain leakage, there is an another mechanism that causes this negative drain current. According to some measurements, it is found that the negative drain current is related to the steep VGS transition, and the large reduction of hole density in the nanowire channel induces a transient negative drain current. Based on this mechanism, for reverse sweeping of VGS, the positive drain current is measured due to an increment of hole density in the nanowire channel. To explain the mechanism well, the hole density in the Si channel is simulated and an AC model is proposed. Finally, it is likely that the transient negative current of the drain is also affected by the gate transient current, besides the large reduction of hole density.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/abc85b