Passivation mechanism of the high-performance titanium oxide carrier-selective contacts on crystalline silicon studied by spectroscopic ellipsometry

Variable-angle spectroscopic ellipsometry analysis is performed to study the impact of post-deposition annealing on the passivation performance of the heterocontacts consisting of titanium oxide and silicon oxide on crystalline silicon (c-Si) prepared by atomic layer deposition (ALD) for the develop...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2021-05, Vol.60 (SB), p.SBBF04
Main Authors: Gotoh, Kazuhiro, Miura, Hiroyuki, Shimizu, Ayako, Kurokawa, Yasuyoshi, Usami, Noritaka
Format: Article
Language:English
Subjects:
Annealing
Atomic layer epitaxy
Contact angle
Crystal structure
Crystallinity
Diffusion layers
Enhanced diffusion
Interlayers
optical properties
passivation
Passivity
Photovoltaic cells
silicon
Silicon oxides
solar cell material
Spectroellipsometry
Spectroscopic analysis
titanium oxide
Titanium oxides
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Summary:Variable-angle spectroscopic ellipsometry analysis is performed to study the impact of post-deposition annealing on the passivation performance of the heterocontacts consisting of titanium oxide and silicon oxide on crystalline silicon (c-Si) prepared by atomic layer deposition (ALD) for the development of high-performance ALD-TiOx/SiOy/c-Si heterocontacts. The highest lifetime of 1.8 ms is obtained for the TiOx/SiOy/c-Si heterocontacts grown at 175 °C after annealing at 275 °C for 3 min. With increasing annealing temperature, the TiOx layers of the TiOx/SiOy/c-Si heterocontacts become dominant. Furthermore, the amplitude of dielectric functions of the ALD-TiOx layer decreases as annealing temperature increases, which suggests that enhanced diffusion of Ti into SiOy interlayers at higher annealing temperature. The sufficient diffusion of Ti atoms into SiOy interlayers is caused by annealing at 275 °C for 3 min, yielding high-quality interface passivation.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/abd6dd