Comparison of characteristics of thin-film transistor with In 2 O 3 and carbon-doped In 2 O 3 channels by atomic layer deposition and post-metallization annealing in O 3

Characteristics of thin-film transistors (TFTs) with amorphous In 2 O 3 (InO 1.2 ) and carbon-doped In 2 O 3 (InO 1.16 C 0.04 ) channels by post-metallization annealing (PMA) process were investigated. The InO 1.2 TFT changed from metallic to switching behavior after PMA at 200 °C. In contrast, the...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2021-03, Vol.60 (3), p.30903
Main Authors: Kobayashi, Riku, Nabatame, Toshihide, Onaya, Takashi, Ohi, Akihiko, Ikeda, Naoki, Nagata, Takahiro, Tsukagoshi, Kazuhito, Ogura, Atsushi
Format: Article
Language:English
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Summary:Characteristics of thin-film transistors (TFTs) with amorphous In 2 O 3 (InO 1.2 ) and carbon-doped In 2 O 3 (InO 1.16 C 0.04 ) channels by post-metallization annealing (PMA) process were investigated. The InO 1.2 TFT changed from metallic to switching behavior after PMA at 200 °C. In contrast, the InO 1.16 C 0.04 TFT exhibited superior properties such as a threshold voltage ( V th ) of 3.2 V and a high mobility of 20.4 cm 2  V −1  s −1 at PMA 150 °C because of the reduction of excess oxygen vacancies. A large negative V th shift was observed for the InO 1.2 TFT for 10 800 s in N 2 under zero bias voltage while there was no V th change for the InO 1.16 C 0.04 TFT.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/abde54