Fabrication of inverted ZnCuInS/ZnS based quantum-dot light-emitting diodes with the non-stoichiometric ZnO layers

The performance of the Cd-free quantum-dot light-emitting diode was investigated using un-doped and non-stoichiometric sputtered ZnO. Highly conductive metallic ZnO was sputtered with the presence of pure argon (Ar) gas, where the thickness was varied to enhance the structural, morphological, and el...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2021-08, Vol.60 (8), p.84001
Main Authors: Biswas, Mohammad Mostafizur Rahman, Hossain, Md. Faruk, Okada, Hiroyuki
Format: Article
Language:English
Subjects:
Argon
Carrier density
Current efficiency
Electrical properties
Hall effect
Inverted structure
Light emitting diodes
Measurement techniques
Morphology
Non-stoichiometric ZnO
Photovoltaic cells
Quantum dot light emitting diode (QLED)
Quantum dots
Quantum efficiency
Sputtering
Substrates
Zinc oxide
Zinc sulfide
ZnCuInS/ZnS quantum dots
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Summary:The performance of the Cd-free quantum-dot light-emitting diode was investigated using un-doped and non-stoichiometric sputtered ZnO. Highly conductive metallic ZnO was sputtered with the presence of pure argon (Ar) gas, where the thickness was varied to enhance the structural, morphological, and electrical properties. The electrical properties of the fabricated ZnO were measured using the Hall measurement technique. Consequently, the device performance was validated by the mobility and carrier concentration of the sputtered ZnO film. In addition, from the X-ray diffraction analysis, it was confirmed that the ZnO film was grown on c(002)-axis orientation, parallel to the substrate surface. The morphological properties were also observed using a field-emission-scanning electron microscope to integrate with the crystalline growth conditions of XRD analysis. The external quantum efficiency of 1.02% and current efficiency of 1.86 cd A−1 were achieved with the mobility of 15.1 cm2 V−1 s−1 and carrier concentration of 2.94 נ1020 cm−3 of the ZnO film.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac1129