Surface proton conduction below 100 °C of Ce 0.80 Sm 0.20 O 2−δ thin film with oxygen vacancies

Ce 0.80 Sm 0.20 O 2− δ thin films with (111) orientation were prepared on (0001) Al 2 O 3 substrates by RF magnetron sputtering. The Ce 3+ valence ratios, which are closely related to the oxygen vacancies’ concentration, of the as-deposited and wet-annealed thin films were 37.8% and 29.3%, respectiv...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2022-06, Vol.61 (SD), p.SD1017
Main Authors: Notake, Go, Nishioka, Daiki, Murasawa, Hideaki, Takayanagi, Makoto, Fukushima, Yoshiaki, Ito, Hiroki, Takada, Tomoasa, Shiga, Daisuke, Kitamura, Miho, Kumigashira, Hiroshi, Higuchi, Tohru
Format: Article
Language:English
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Summary:Ce 0.80 Sm 0.20 O 2− δ thin films with (111) orientation were prepared on (0001) Al 2 O 3 substrates by RF magnetron sputtering. The Ce 3+ valence ratios, which are closely related to the oxygen vacancies’ concentration, of the as-deposited and wet-annealed thin films were 37.8% and 29.3%, respectively. These thin films exhibited oxygen ion related conduction in the medium-temperature region of 800 to 200 °C. Below 100 °C, the conductivity ( σ ) of the wet-annealed thin film increased as the temperature ( T ) decreased and the σT value was ∼1.0 S cm −1 K at 25 °C. The O 1 s photoemission spectrum exhibited H 2 O and OH − peaks on the surface. The above results indicate that the protons on the surface of the wet-annealed thin film actively migrated through the physisorbed water layer by the Grotthuss mechanism.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac4feb