Growth of high-crystallinity silicon films by a combination of intermittent pulse heating and plasma-enhanced chemical vapor deposition

We have developed a process to grow high-crystallinity silicon films on insulators by intermittent pulse heating (IPH)-assisted plasma-enhanced chemical vapor deposition to address a drawback of incubation layer formation at the early stage of growth. By applying electrical pulses (22 V, 5 Hz, 10% d...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2022-07, Vol.61 (SI), p.SI1010
Main Authors: Nojima, Taishi, Hanafusa, Hiroaki, Sato, Takuma, Hayashi, Shohei, Higashi, Seiichiro
Format: Article
Language:English
Subjects:
Bottom-gate thin-film transistors
Crystal structure
Crystallinity
Epitaxial growth
Insulators
IPH-CVD
PECVD
Plasma enhanced chemical vapor deposition
poly-Si
Pulse heating
Silicon dioxide
Silicon films
solid phase epitaxy
Solid phases
Strip
Substrates
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have developed a process to grow high-crystallinity silicon films on insulators by intermittent pulse heating (IPH)-assisted plasma-enhanced chemical vapor deposition to address a drawback of incubation layer formation at the early stage of growth. By applying electrical pulses (22 V, 5 Hz, 10% duty ratio) to a Mo strip underneath a SiO 2 layer, the surface is instantaneously heated to 1050 K while maintaining a steady substrate temperature of 670 K. The growth mechanism similar to that of solid-phase epitaxy enhanced its growth rate up to 1.2 nm s −1 , which is five times greater than that of a-Si grown outside the Mo strip. The grown films assisted with IPH also showed a 97% crystalline volume fraction with no incubation layer.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac6412