Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl 3 gas supply system

One critical issue hindering high-quality, high-speed growth of GaN is cluster formation in the gas phase. We investigated cluster formation in tri-halide vapor phase epitaxial growth of GaN. The growth system is equipped with an external GaCl 3 gas supply system. We observed cluster formation under...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2022-07, Vol.61 (7), p.70909
Main Authors: Hara, Kazukuni, Yamamoto, Eizou, Kozawa, Motoi, Uematsu, Daisuke, Ohara, Junji, Mukaiyama, Yuji, Kojima, Jun, Onda, Shoichi, Suda, Jun
Format: Article
Language:English
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Summary:One critical issue hindering high-quality, high-speed growth of GaN is cluster formation in the gas phase. We investigated cluster formation in tri-halide vapor phase epitaxial growth of GaN. The growth system is equipped with an external GaCl 3 gas supply system. We observed cluster formation under certain growth conditions experimentally. A simulation was also carried out to reveal the critical conditions for cluster formation. We propose that increasing the gas temperature is an effective way to suppress cluster formation, and thus achieve a higher growth rate with a flat surface morphology.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac7a7a