Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl 3 gas supply system

One critical issue hindering high-quality, high-speed growth of GaN is cluster formation in the gas phase. We investigated cluster formation in tri-halide vapor phase epitaxial growth of GaN. The growth system is equipped with an external GaCl 3 gas supply system. We observed cluster formation under...

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Published in:Japanese Journal of Applied Physics 2022-07, Vol.61 (7), p.70909
Main Authors: Hara, Kazukuni, Yamamoto, Eizou, Kozawa, Motoi, Uematsu, Daisuke, Ohara, Junji, Mukaiyama, Yuji, Kojima, Jun, Onda, Shoichi, Suda, Jun
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creator Hara, Kazukuni
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description One critical issue hindering high-quality, high-speed growth of GaN is cluster formation in the gas phase. We investigated cluster formation in tri-halide vapor phase epitaxial growth of GaN. The growth system is equipped with an external GaCl 3 gas supply system. We observed cluster formation under certain growth conditions experimentally. A simulation was also carried out to reveal the critical conditions for cluster formation. We propose that increasing the gas temperature is an effective way to suppress cluster formation, and thus achieve a higher growth rate with a flat surface morphology.
doi_str_mv 10.35848/1347-4065/ac7a7a
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title Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl 3 gas supply system
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