Effect of Au electrode on the resistance change response of HfO x -based ReRAM device under voltage pulse trains

The demand for neuromorphic computing is increasing, and resistive random access memory (ReRAM) devices are intriguing candidates for synaptic applications. We studied a Ti/HfO x /Au ReRAM device with this potential in view, and fabricated a Ti/HfO x /Pt device for comparison. Both devices exhibited...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2022-10, Vol.61 (SM), p.SM1011
Main Authors: Shingubara, S., Huang, C.Y., Hatanaka, R., Shimizu, T., Ito, T.
Format: Article
Language:English
Subjects:
artificial neuron
Au electrode
diffusion
HfOx
neuromorphic computing
ReRAM
synaptic device
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Summary:The demand for neuromorphic computing is increasing, and resistive random access memory (ReRAM) devices are intriguing candidates for synaptic applications. We studied a Ti/HfO x /Au ReRAM device with this potential in view, and fabricated a Ti/HfO x /Pt device for comparison. Both devices exhibited bipolar switching characteristics. In response to voltage pulse trains, gradual resistance change was observed in the Ti/HfO x /Au device for both the SET and RESET processes, indicating its suitability for artificial synapse application. In contrast, an abrupt resistance change was observed in the SET process of the Ti/HfO x /Pt device. A significant diffusion of Au atoms occurred in the HfO x layer of the Ti/HfO x /Au device, and the Au atoms were oxidized at the interface. This led to an increase in the O vacancy concentration, which assisted the achievement of the gradual resistance change. The present study indicates that the Ti/HfO x /Au device demonstrates good potential for use as an artificial synaptic device.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac7bf5