Growth of α-Ga 2 O 3 on α-Al 2 O 3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy

We report the growth of α -Ga 2 O 3 on m -plane α -Al 2 O 3 by conventional plasma-assisted molecular-beam epitaxy and In-mediated metal–oxide-catalyzed epitaxy (MOCATAXY). We report a growth rate diagram for α -Ga 2 O 3 ( 10 1 ¯ 0 ), and observe (i) a growth rate increase, (ii) an expanded growth w...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2023-06, Vol.62 (SF), p.SF1013
Main Authors: McCandless, J. P., Rowe, D., Pieczulewski, N., Protasenko, V., Alonso-Orts, M., Williams, M. S., Eickhoff, M., Xing, H. G., Muller, D. A., Jena, D., Vogt, P.
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Language:English
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Summary:We report the growth of α -Ga 2 O 3 on m -plane α -Al 2 O 3 by conventional plasma-assisted molecular-beam epitaxy and In-mediated metal–oxide-catalyzed epitaxy (MOCATAXY). We report a growth rate diagram for α -Ga 2 O 3 ( 10 1 ¯ 0 ), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-plane mosaic spread when MOCATAXY is employed for the growth of α -Ga 2 O 3 . Through the use of In-mediated catalysis, growth rates over 0.2 μ m h −1 and rocking curves with full width at half maxima of Δ ω ≈ 0.45° are achieved. Faceting is observed along the α -Ga 2 O 3 film surface and explored through scanning transmission electron microscopy.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/acbe04