Circular ferroelectric tunnel junctions for the improvement of memory window and endurance

A circular ferroelectric tunnel junction (C-FTJ) is proposed for a larger memory window and better endurance than a conventional planar FTJ (P-FTJ). The electrical characteristics of the proposed C-FTJ are evaluated compared with a conventional P-FTJ by using device simulation. It is confirmed that...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2023-06, Vol.62 (SG), p.SG1044
Main Authors: Kim, Dong-Oh, Kim, Changha, Kim, Hyun-Min, Park, Jonghyuk, Jeon, Bosung, Kwon, Daewoong, Choi, Woo Young
Format: Article
Language:English
Subjects:
Electric fields
Electrical junctions
Endurance
Ferroelectric materials
ferroelectric switching
ferroelectric tunnel junction
Ferroelectricity
HfO
IL degradation
MFIM
MFIS
Tunnel junctions
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Summary:A circular ferroelectric tunnel junction (C-FTJ) is proposed for a larger memory window and better endurance than a conventional planar FTJ (P-FTJ). The electrical characteristics of the proposed C-FTJ are evaluated compared with a conventional P-FTJ by using device simulation. It is confirmed that C-FTJs have more excellent ferroelectric switching than P-FTJs because the electric field becomes more concentrated across the ferroelectric layer. Also, C-FTJs show better endurance because the electric field applied to the interfacial layer is alleviated.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/acc669