Loading…
Influence of HCl concentration in source solution and growth temperature on formation of α-Ga 2 O 3 film via mist-CVD process
We have examined the effect of synthesis conditions on α -Ga 2 O 3 film, one of the ultra-wide bandgap semiconductors, on c -plane sapphire substrate via mist CVD process. The resultant film is dominantly composed of α -Ga 2 O 3 phase, but a small amount of κ -Ga 2 O 3 phase coexists when the growth...
Saved in:
| Published in: | Japanese Journal of Applied Physics 2023-06, Vol.62 (SF), p.SF1024 |
|---|---|
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Citations: | Items that this one cites |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | We have examined the effect of synthesis conditions on
α
-Ga
2
O
3
film, one of the ultra-wide bandgap semiconductors, on
c
-plane sapphire substrate via mist CVD process. The resultant film is dominantly composed of
α
-Ga
2
O
3
phase, but a small amount of
κ
-Ga
2
O
3
phase coexists when the growth temperature is higher. The source solution containing higher concentration of HCl expands the range of temperatures at which single-phase
α
-Ga
2
O
3
is grown and suppresses the inclusion of
κ
-Ga
2
O
3
at higher growth temperatures. Moreover, the growth with higher concentration of HCl up to 0.66 mol l
−1
increases the growth rate and improves the surface roughness. Thus, HCl has a crucial role in the selective growth of
α
-Ga
2
O
3
and the quality of the film. Also, some pits are observed at the surface of
α
-Ga
2
O
3
and
κ
-Ga
2
O
3
is precipitated inside the pit defect when the concentration of HCl is low and the growth temperature is high. |
|---|---|
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.35848/1347-4065/acc9cf |