Piezoelectric effect in 2H and 3R phases of α-In 2 Se 3

α -In 2 Se 3 is a two-dimensional (2D) ferroelectric semiconductor at RT. Here we study piezoelectric d 33 coefficients in 2H and 3R phases of α -In 2 Se 3 single crystals at RT. Dynamic displacement signals measured with a laser Doppler vibrometer increase linearly with applied electric fields, con...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2023-06, Vol.62 (6), p.61006
Main Authors: Ueda, Keisuke, Murata, Ryoga, Sasagawa, Takao, Shiomi, Yuki
Format: Article
Language:English
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Summary:α -In 2 Se 3 is a two-dimensional (2D) ferroelectric semiconductor at RT. Here we study piezoelectric d 33 coefficients in 2H and 3R phases of α -In 2 Se 3 single crystals at RT. Dynamic displacement signals measured with a laser Doppler vibrometer increase linearly with applied electric fields, consistent with the inverse piezoelectric effect. The estimated d 33 coefficients are about 50 pm V −1 in the 2H phase and about 10 pm V −1 in the 3R phase. These d 33 values in α -In 2 Se 3 are large among 2D piezoelectric materials reported before. The slightly larger d 33 value in the 2H phase could be attributed to the stacking structure with in-plane rotation, which allows the 2D layers to move more easily in the perpendicular direction.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/acdc72