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Piezoelectric effect in 2H and 3R phases of α-In 2 Se 3
α -In 2 Se 3 is a two-dimensional (2D) ferroelectric semiconductor at RT. Here we study piezoelectric d 33 coefficients in 2H and 3R phases of α -In 2 Se 3 single crystals at RT. Dynamic displacement signals measured with a laser Doppler vibrometer increase linearly with applied electric fields, con...
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| Published in: | Japanese Journal of Applied Physics 2023-06, Vol.62 (6), p.61006 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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| container_issue | 6 |
| container_start_page | 61006 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 62 |
| creator | Ueda, Keisuke Murata, Ryoga Sasagawa, Takao Shiomi, Yuki |
| description | α
-In
2
Se
3
is a two-dimensional (2D) ferroelectric semiconductor at RT. Here we study piezoelectric
d
33
coefficients in 2H and 3R phases of
α
-In
2
Se
3
single crystals at RT. Dynamic displacement signals measured with a laser Doppler vibrometer increase linearly with applied electric fields, consistent with the inverse piezoelectric effect. The estimated
d
33
coefficients are about 50 pm V
−1
in the 2H phase and about 10 pm V
−1
in the 3R phase. These
d
33
values in
α
-In
2
Se
3
are large among 2D piezoelectric materials reported before. The slightly larger
d
33
value in the 2H phase could be attributed to the stacking structure with in-plane rotation, which allows the 2D layers to move more easily in the perpendicular direction. |
| doi_str_mv | 10.35848/1347-4065/acdc72 |
| format | article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_35848_1347_4065_acdc72</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_35848_1347_4065_acdc72</sourcerecordid><originalsourceid>FETCH-crossref_primary_10_35848_1347_4065_acdc723</originalsourceid><addsrcrecordid>eNqdjkkKwjAYhYMoWIcDuPsvEM3UwbUodSfqPoQ0wUhtS-JGb-VFPJOtigdw9SYefAjNKJnzOBPZgnKRYkGSeKF0oVPWQ9Gv6qOIEEaxWDI2RKMQzm1MYkEjlO2cudemNPrqnQZjbevAVcByUFUBfA_NSQUToLbwfOBtu8DBAJ-ggVVlMNOvjhHdrI-rHGtfh-CNlY13F-VvkhL5RpQdj-x45AeR__N5AbbvQwk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Piezoelectric effect in 2H and 3R phases of α-In 2 Se 3</title><source>Institute of Physics IOPscience extra</source><source>Institute of Physics</source><creator>Ueda, Keisuke ; Murata, Ryoga ; Sasagawa, Takao ; Shiomi, Yuki</creator><creatorcontrib>Ueda, Keisuke ; Murata, Ryoga ; Sasagawa, Takao ; Shiomi, Yuki</creatorcontrib><description>α
-In
2
Se
3
is a two-dimensional (2D) ferroelectric semiconductor at RT. Here we study piezoelectric
d
33
coefficients in 2H and 3R phases of
α
-In
2
Se
3
single crystals at RT. Dynamic displacement signals measured with a laser Doppler vibrometer increase linearly with applied electric fields, consistent with the inverse piezoelectric effect. The estimated
d
33
coefficients are about 50 pm V
−1
in the 2H phase and about 10 pm V
−1
in the 3R phase. These
d
33
values in
α
-In
2
Se
3
are large among 2D piezoelectric materials reported before. The slightly larger
d
33
value in the 2H phase could be attributed to the stacking structure with in-plane rotation, which allows the 2D layers to move more easily in the perpendicular direction.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/acdc72</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2023-06, Vol.62 (6), p.61006</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-crossref_primary_10_35848_1347_4065_acdc723</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ueda, Keisuke</creatorcontrib><creatorcontrib>Murata, Ryoga</creatorcontrib><creatorcontrib>Sasagawa, Takao</creatorcontrib><creatorcontrib>Shiomi, Yuki</creatorcontrib><title>Piezoelectric effect in 2H and 3R phases of α-In 2 Se 3</title><title>Japanese Journal of Applied Physics</title><description>α
-In
2
Se
3
is a two-dimensional (2D) ferroelectric semiconductor at RT. Here we study piezoelectric
d
33
coefficients in 2H and 3R phases of
α
-In
2
Se
3
single crystals at RT. Dynamic displacement signals measured with a laser Doppler vibrometer increase linearly with applied electric fields, consistent with the inverse piezoelectric effect. The estimated
d
33
coefficients are about 50 pm V
−1
in the 2H phase and about 10 pm V
−1
in the 3R phase. These
d
33
values in
α
-In
2
Se
3
are large among 2D piezoelectric materials reported before. The slightly larger
d
33
value in the 2H phase could be attributed to the stacking structure with in-plane rotation, which allows the 2D layers to move more easily in the perpendicular direction.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNqdjkkKwjAYhYMoWIcDuPsvEM3UwbUodSfqPoQ0wUhtS-JGb-VFPJOtigdw9SYefAjNKJnzOBPZgnKRYkGSeKF0oVPWQ9Gv6qOIEEaxWDI2RKMQzm1MYkEjlO2cudemNPrqnQZjbevAVcByUFUBfA_NSQUToLbwfOBtu8DBAJ-ggVVlMNOvjhHdrI-rHGtfh-CNlY13F-VvkhL5RpQdj-x45AeR__N5AbbvQwk</recordid><startdate>20230601</startdate><enddate>20230601</enddate><creator>Ueda, Keisuke</creator><creator>Murata, Ryoga</creator><creator>Sasagawa, Takao</creator><creator>Shiomi, Yuki</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20230601</creationdate><title>Piezoelectric effect in 2H and 3R phases of α-In 2 Se 3</title><author>Ueda, Keisuke ; Murata, Ryoga ; Sasagawa, Takao ; Shiomi, Yuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-crossref_primary_10_35848_1347_4065_acdc723</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ueda, Keisuke</creatorcontrib><creatorcontrib>Murata, Ryoga</creatorcontrib><creatorcontrib>Sasagawa, Takao</creatorcontrib><creatorcontrib>Shiomi, Yuki</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ueda, Keisuke</au><au>Murata, Ryoga</au><au>Sasagawa, Takao</au><au>Shiomi, Yuki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Piezoelectric effect in 2H and 3R phases of α-In 2 Se 3</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2023-06-01</date><risdate>2023</risdate><volume>62</volume><issue>6</issue><spage>61006</spage><pages>61006-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>α
-In
2
Se
3
is a two-dimensional (2D) ferroelectric semiconductor at RT. Here we study piezoelectric
d
33
coefficients in 2H and 3R phases of
α
-In
2
Se
3
single crystals at RT. Dynamic displacement signals measured with a laser Doppler vibrometer increase linearly with applied electric fields, consistent with the inverse piezoelectric effect. The estimated
d
33
coefficients are about 50 pm V
−1
in the 2H phase and about 10 pm V
−1
in the 3R phase. These
d
33
values in
α
-In
2
Se
3
are large among 2D piezoelectric materials reported before. The slightly larger
d
33
value in the 2H phase could be attributed to the stacking structure with in-plane rotation, which allows the 2D layers to move more easily in the perpendicular direction.</abstract><doi>10.35848/1347-4065/acdc72</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2023-06, Vol.62 (6), p.61006 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_35848_1347_4065_acdc72 |
| source | Institute of Physics IOPscience extra; Institute of Physics |
| title | Piezoelectric effect in 2H and 3R phases of α-In 2 Se 3 |
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