Photo-thermoelectric effect-driven detection of optical communication light in graphene/hBN heterostructures

We report on the photodetection properties of high-quality graphene encapsulated by hexagonal boron nitride under illumination with optical communication light. We demonstrate a gate-tunable photocurrent and zero-bias switching cycle operation at RT. Through gate and temperature-dependent photocurre...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2024-03, Vol.63 (3), p.30903
Main Authors: Iwasaki, Takuya, Sato, Yodai, Ogo, Makoto, Oh, Byunghun, Kozawa, Daichi, Kitaura, Ryo, Watanabe, Kenji, Taniguchi, Takashi, Moriyama, Satoshi, Fujikata, Junichi
Format: Article
Language:English
Subjects:
Boron nitride
Graphene
graphene/hBN heterostructure
Heterostructures
Light
Low temperature
Optical communication
optical communication light
Optoelectronic devices
photo-thermoelectric effect
photodetection
Photoelectric effect
Photoelectric emission
Seebeck effect
Temperature dependence
Thermoelectricity
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Summary:We report on the photodetection properties of high-quality graphene encapsulated by hexagonal boron nitride under illumination with optical communication light. We demonstrate a gate-tunable photocurrent and zero-bias switching cycle operation at RT. Through gate and temperature-dependent photocurrent measurements, we determine that the dominant photoresponse mechanism is the photo-thermoelectric effect. At low temperatures, the photocurrent in finite doping regions correlates with the Seebeck coefficient, while sharp peaks emerge near the charge neutrality point due to an edge-excited photocurrent. Our study provides guidelines for high-performance graphene-based optoelectronic devices.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad2bd6