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Subthreshold and turn-on characteristics in Schottky-type p -GaN Gate HEMTs: impact of partially and fully depleted p -GaN layer
In this work, the impact of partially depleted and fully depleted p -GaN (PDP-GaN and FDP-GaN) layers on the gate characteristics of Schottky-type p -GaN Gate HEMTs is investigated. Four wafers are fabricated via different annealing temperatures to achieve the PDP-GaN and FDP-GaN layers. Devices wit...
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Published in: | Japanese Journal of Applied Physics 2025-01 |
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Main Authors: | , , , , , , , , , |
Format: | Article |
Language: | English |
Online Access: | Get full text |
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Summary: | In this work, the impact of partially depleted and fully depleted p -GaN (PDP-GaN and FDP-GaN) layers on the gate characteristics of Schottky-type p -GaN Gate HEMTs is investigated. Four wafers are fabricated via different annealing temperatures to achieve the PDP-GaN and FDP-GaN layers. Devices with PDP-GaN show nearly identical SS / V TH , while G m,max enhances with increased activated Mg concentration. Meanwhile, the device with FDP-GaN demonstrates higher SS , lower V TH , and specific G m,max compared to the others. It turns out that subthreshold and turn-on characteristics are attributed to the position of Fermi level in p -GaN and the Schottky tunneling leakage current, respectively. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.35848/1347-4065/ada708 |