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Subthreshold and turn-on characteristics in Schottky-type p -GaN Gate HEMTs: impact of partially and fully depleted p -GaN layer

In this work, the impact of partially depleted and fully depleted p -GaN (PDP-GaN and FDP-GaN) layers on the gate characteristics of Schottky-type p -GaN Gate HEMTs is investigated. Four wafers are fabricated via different annealing temperatures to achieve the PDP-GaN and FDP-GaN layers. Devices wit...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2025-01
Main Authors: Liu, Xuan, Feng, Chao, Mao, Danfeng, Wang, YuHao, Du, Rongxin, Wang, Xiaoping, Hu, Haolin, Zeng, Wei, Zhou, David, Wan, Yuxi
Format: Article
Language:English
Online Access:Get full text
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Summary:In this work, the impact of partially depleted and fully depleted p -GaN (PDP-GaN and FDP-GaN) layers on the gate characteristics of Schottky-type p -GaN Gate HEMTs is investigated. Four wafers are fabricated via different annealing temperatures to achieve the PDP-GaN and FDP-GaN layers. Devices with PDP-GaN show nearly identical SS / V TH , while G m,max enhances with increased activated Mg concentration. Meanwhile, the device with FDP-GaN demonstrates higher SS , lower V TH , and specific G m,max compared to the others. It turns out that subthreshold and turn-on characteristics are attributed to the position of Fermi level in p -GaN and the Schottky tunneling leakage current, respectively.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ada708