Strong coupling between a single quantum dot and an L4/3 photonic crystal nanocavity

We demonstrate strong coupling between a single quantum dot (QD) and a GaAs-based L4/3-type photonic crystal nanocavity. The L4/3 cavity supports a high theoretical Q factor (∼8 × 106), a small mode volume [∼0.32 (λ/n)3], and an electric field distribution with the maximum electric field lying withi...

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Bibliographic Details
Published in:Applied physics express 2020-08, Vol.13 (8), p.82009
Main Authors: Kuruma, Kazuhiro, Ota, Yasutomo, Kakuda, Masahiro, Iwamoto, Satoshi, Arakawa, Yasuhiko
Format: Article
Language:English
Subjects:
cavity quantum electrodynamics
photonic crystal
quantum dot
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Summary:We demonstrate strong coupling between a single quantum dot (QD) and a GaAs-based L4/3-type photonic crystal nanocavity. The L4/3 cavity supports a high theoretical Q factor (∼8 × 106), a small mode volume [∼0.32 (λ/n)3], and an electric field distribution with the maximum electric field lying within the host dielectric material, which facilitates strong coupling with a QD. We fabricated L4/3 cavities and observed a high Q factor over 80 000 using photoluminescence measurement. We confirmed strong coupling between a single QD and an L4/3 cavity with a Q factor of 33 000 by observing a clear anti-crossing in the spectra.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/aba7a8