Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing

Isochronal annealing was performed on Mg-ion-implanted GaN under 1 GPa N 2 ambient pressure for 5 min at temperatures of 1573–1753 K. Secondary ion mass spectrometry showed diffusion of Mg atoms and introduction of H atoms during annealing. Deeper diffusion was observed with increasing temperature....

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Bibliographic Details
Published in:Applied physics express 2021-05, Vol.14 (5), p.56501
Main Authors: Hirukawa, Kazufumi, Sumida, Kensuke, Sakurai, Hideki, Fujikura, Hajime, Horita, Masahiro, Otoki, Yohei, Sierakowski, Kacper, Bockowski, Michal, Kachi, Tetsu, Suda, Jun
Format: Article
Language:English
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Summary:Isochronal annealing was performed on Mg-ion-implanted GaN under 1 GPa N 2 ambient pressure for 5 min at temperatures of 1573–1753 K. Secondary ion mass spectrometry showed diffusion of Mg atoms and introduction of H atoms during annealing. Deeper diffusion was observed with increasing temperature. From Hall-effect measurements, p-type conductivity was found even for the sample with the lowest annealing temperature of 1573 K. For this sample, the acceptor activation ratio was 23% and the compensation ratio was 93%. The acceptor activation ratio increased to almost 100% and the compensation ratio decreased to 12% with increasing annealing temperature.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/abf4f3