Depletion effects in moderately doped TiO 2 layers from C–V characteristics of MIS structures on Si

This letter investigates the large spread of values of capacitance measured in Si/TiO 2 MIS structures for different properties of the TiO 2 layer and proposes an approach to understand the behavior of the system. Experimental results show large variations of the maximum capacitance with TiO 2 thick...

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Bibliographic Details
Published in:Applied physics express 2021-05, Vol.14 (5), p.51008
Main Authors: Lontchi, Jackson, Doghmen, Hajer, Krumpmann, Arnaud, Snyders, Rony, Flandre, Denis
Format: Article
Language:English
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Summary:This letter investigates the large spread of values of capacitance measured in Si/TiO 2 MIS structures for different properties of the TiO 2 layer and proposes an approach to understand the behavior of the system. Experimental results show large variations of the maximum capacitance with TiO 2 thickness for the as-deposited structures and further highlight the change of trend after annealing. Simulations qualitatively depict the theoretical trends explaining the C – V characteristics to the first order, by the different behaviors of the oxide layer in the structure and the distribution of the majority carriers showing depletion effects.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/abfb61