Electric field dependence of terahertz wave emission in temperature-controlled GaAs epitaxial films

We have investigated the dependence of terahertz wave emissions on the internal electric field in undoped GaAs/ n -type GaAs epitaxial structures irradiated by ultrashort laser pulses. The undoped layer has an electric field, the strength of which was controlled by the temperature in addition to the...

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Bibliographic Details
Published in:Applied physics express 2022-05, Vol.15 (5), p.51001
Main Authors: Hasegawa, Takayuki, Marui, Masaya, Tanaka, Yoshihito
Format: Article
Language:English
Subjects:
carrier transport
coherent phonon
plasmon
surface electric field
terahertz
ultrafast phenomena
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Summary:We have investigated the dependence of terahertz wave emissions on the internal electric field in undoped GaAs/ n -type GaAs epitaxial structures irradiated by ultrashort laser pulses. The undoped layer has an electric field, the strength of which was controlled by the temperature in addition to the undoped layer thickness. We observed the electric field dependence of the terahertz waveform, and the results were explained by the calculation of the transient dynamics of electrons and phonons under electric fields. Furthermore, we indicated that the terahertz amplitude can be linearly controlled by the electric field strength in a wide electric field range.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ac5fc7