The effect of SiN x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors

A thin SiN x film was deposited on the p-GaN layer before H plasma implantation, which cause four orders of magnitude reduction in gate reverse leakage current. The OFF-state breakdown voltage increases by 89%. It displays a more stable dynamic performance. It is believed that the decrease of gate l...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics express 2022-07, Vol.15 (7), p.71010
Main Authors: Huang, Xingjie, Xing, Yanhui, Yu, Guohao, Tang, Wenxin, Wei, Xing, Song, Liang, Zhang, Xiaodong, Fan, Yaming, Zeng, Zhongming, Cai, Yong, Zhang, Baoshun, Huang, Zengli, Huang, Rong, Han, Jun
Format: Article
Language:English
Subjects:
gate leakage current
OFF-state breakdown voltage
p-GaN gate HEMT
SiNx film
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A thin SiN x film was deposited on the p-GaN layer before H plasma implantation, which cause four orders of magnitude reduction in gate reverse leakage current. The OFF-state breakdown voltage increases by 89%. It displays a more stable dynamic performance. It is believed that the decrease of gate leakage current is attributed to the increase of trap activation energies in the p-GaN layer, It is concluded that improved dynamic characteristics are owing to the fact that the SiN x film blocks the excessive H plasma into the AlGaN barrier layer and reduces the implantation damage in AlGaN barrier layer.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ac7a90