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The effect of SiN x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors
A thin SiN x film was deposited on the p-GaN layer before H plasma implantation, which cause four orders of magnitude reduction in gate reverse leakage current. The OFF-state breakdown voltage increases by 89%. It displays a more stable dynamic performance. It is believed that the decrease of gate l...
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| Published in: | Applied physics express 2022-07, Vol.15 (7), p.71010 |
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| Main Authors: | , , , , , , , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c246t-9b612941b8ac477e5e6f6b76a044804217724b02ac2ddad5f63a0e347743ff463 |
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| cites | cdi_FETCH-LOGICAL-c246t-9b612941b8ac477e5e6f6b76a044804217724b02ac2ddad5f63a0e347743ff463 |
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| container_issue | 7 |
| container_start_page | 71010 |
| container_title | Applied physics express |
| container_volume | 15 |
| creator | Huang, Xingjie Xing, Yanhui Yu, Guohao Tang, Wenxin Wei, Xing Song, Liang Zhang, Xiaodong Fan, Yaming Zeng, Zhongming Cai, Yong Zhang, Baoshun Huang, Zengli Huang, Rong Han, Jun |
| description | A thin SiN
x
film was deposited on the p-GaN layer before H plasma implantation, which cause four orders of magnitude reduction in gate reverse leakage current. The OFF-state breakdown voltage increases by 89%. It displays a more stable dynamic performance. It is believed that the decrease of gate leakage current is attributed to the increase of trap activation energies in the p-GaN layer, It is concluded that improved dynamic characteristics are owing to the fact that the SiN
x
film blocks the excessive H plasma into the AlGaN barrier layer and reduces the implantation damage in AlGaN barrier layer. |
| doi_str_mv | 10.35848/1882-0786/ac7a90 |
| format | article |
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x
film was deposited on the p-GaN layer before H plasma implantation, which cause four orders of magnitude reduction in gate reverse leakage current. The OFF-state breakdown voltage increases by 89%. It displays a more stable dynamic performance. It is believed that the decrease of gate leakage current is attributed to the increase of trap activation energies in the p-GaN layer, It is concluded that improved dynamic characteristics are owing to the fact that the SiN
x
film blocks the excessive H plasma into the AlGaN barrier layer and reduces the implantation damage in AlGaN barrier layer.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.35848/1882-0786/ac7a90</identifier><identifier>CODEN: APEPC4</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>gate leakage current ; OFF-state breakdown voltage ; p-GaN gate HEMT ; SiNx film</subject><ispartof>Applied physics express, 2022-07, Vol.15 (7), p.71010</ispartof><rights>2022 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c246t-9b612941b8ac477e5e6f6b76a044804217724b02ac2ddad5f63a0e347743ff463</citedby><cites>FETCH-LOGICAL-c246t-9b612941b8ac477e5e6f6b76a044804217724b02ac2ddad5f63a0e347743ff463</cites><orcidid>0000-0003-2466-0997 ; 0000-0003-0086-3351</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1882-0786/ac7a90/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,38868,53840</link.rule.ids></links><search><creatorcontrib>Huang, Xingjie</creatorcontrib><creatorcontrib>Xing, Yanhui</creatorcontrib><creatorcontrib>Yu, Guohao</creatorcontrib><creatorcontrib>Tang, Wenxin</creatorcontrib><creatorcontrib>Wei, Xing</creatorcontrib><creatorcontrib>Song, Liang</creatorcontrib><creatorcontrib>Zhang, Xiaodong</creatorcontrib><creatorcontrib>Fan, Yaming</creatorcontrib><creatorcontrib>Zeng, Zhongming</creatorcontrib><creatorcontrib>Cai, Yong</creatorcontrib><creatorcontrib>Zhang, Baoshun</creatorcontrib><creatorcontrib>Huang, Zengli</creatorcontrib><creatorcontrib>Huang, Rong</creatorcontrib><creatorcontrib>Han, Jun</creatorcontrib><title>The effect of SiN x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors</title><title>Applied physics express</title><addtitle>Appl. Phys. Express</addtitle><description>A thin SiN
x
film was deposited on the p-GaN layer before H plasma implantation, which cause four orders of magnitude reduction in gate reverse leakage current. The OFF-state breakdown voltage increases by 89%. It displays a more stable dynamic performance. It is believed that the decrease of gate leakage current is attributed to the increase of trap activation energies in the p-GaN layer, It is concluded that improved dynamic characteristics are owing to the fact that the SiN
x
film blocks the excessive H plasma into the AlGaN barrier layer and reduces the implantation damage in AlGaN barrier layer.</description><subject>gate leakage current</subject><subject>OFF-state breakdown voltage</subject><subject>p-GaN gate HEMT</subject><subject>SiNx film</subject><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LwzAYxoMoOKcfwFuOXuqSNE2y4xi6CWMenOfwtk1sRtuUpML27c2ceBIP7x9efs_Dy4PQPSWPeaG4mlGlWEakEjOoJMzJBZr8ni5_d6mu0U2Me0IEz6mYoGbXGGysNdWIvcVvbosP2Lq2w9YHvMZDC7ED7Lq09COMzvfY9XjIVrCdLdpTT4Ub99Fg0yaXkIDOl6514xGPAfro4uhDvEVXFtpo7n7mFL0_P-2W62zzunpZLjZZxbgYs3kpKJtzWiqouJSmMMKKUgognCvCGZWS8ZIwqFhdQ11YkQMxeUJ5bi0X-RTRs28VfIzBWD0E10E4akr0d1T6lIU-5aLPUSVNdtY4P-i9_wx9-vBf_uEPHgZz0LTQMrGUJPVQ2_wLyiF3yw</recordid><startdate>20220701</startdate><enddate>20220701</enddate><creator>Huang, Xingjie</creator><creator>Xing, Yanhui</creator><creator>Yu, Guohao</creator><creator>Tang, Wenxin</creator><creator>Wei, Xing</creator><creator>Song, Liang</creator><creator>Zhang, Xiaodong</creator><creator>Fan, Yaming</creator><creator>Zeng, Zhongming</creator><creator>Cai, Yong</creator><creator>Zhang, Baoshun</creator><creator>Huang, Zengli</creator><creator>Huang, Rong</creator><creator>Han, Jun</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-2466-0997</orcidid><orcidid>https://orcid.org/0000-0003-0086-3351</orcidid></search><sort><creationdate>20220701</creationdate><title>The effect of SiN x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors</title><author>Huang, Xingjie ; Xing, Yanhui ; Yu, Guohao ; Tang, Wenxin ; Wei, Xing ; Song, Liang ; Zhang, Xiaodong ; Fan, Yaming ; Zeng, Zhongming ; Cai, Yong ; Zhang, Baoshun ; Huang, Zengli ; Huang, Rong ; Han, Jun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c246t-9b612941b8ac477e5e6f6b76a044804217724b02ac2ddad5f63a0e347743ff463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>gate leakage current</topic><topic>OFF-state breakdown voltage</topic><topic>p-GaN gate HEMT</topic><topic>SiNx film</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huang, Xingjie</creatorcontrib><creatorcontrib>Xing, Yanhui</creatorcontrib><creatorcontrib>Yu, Guohao</creatorcontrib><creatorcontrib>Tang, Wenxin</creatorcontrib><creatorcontrib>Wei, Xing</creatorcontrib><creatorcontrib>Song, Liang</creatorcontrib><creatorcontrib>Zhang, Xiaodong</creatorcontrib><creatorcontrib>Fan, Yaming</creatorcontrib><creatorcontrib>Zeng, Zhongming</creatorcontrib><creatorcontrib>Cai, Yong</creatorcontrib><creatorcontrib>Zhang, Baoshun</creatorcontrib><creatorcontrib>Huang, Zengli</creatorcontrib><creatorcontrib>Huang, Rong</creatorcontrib><creatorcontrib>Han, Jun</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huang, Xingjie</au><au>Xing, Yanhui</au><au>Yu, Guohao</au><au>Tang, Wenxin</au><au>Wei, Xing</au><au>Song, Liang</au><au>Zhang, Xiaodong</au><au>Fan, Yaming</au><au>Zeng, Zhongming</au><au>Cai, Yong</au><au>Zhang, Baoshun</au><au>Huang, Zengli</au><au>Huang, Rong</au><au>Han, Jun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of SiN x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors</atitle><jtitle>Applied physics express</jtitle><addtitle>Appl. Phys. Express</addtitle><date>2022-07-01</date><risdate>2022</risdate><volume>15</volume><issue>7</issue><spage>71010</spage><pages>71010-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><coden>APEPC4</coden><abstract>A thin SiN
x
film was deposited on the p-GaN layer before H plasma implantation, which cause four orders of magnitude reduction in gate reverse leakage current. The OFF-state breakdown voltage increases by 89%. It displays a more stable dynamic performance. It is believed that the decrease of gate leakage current is attributed to the increase of trap activation energies in the p-GaN layer, It is concluded that improved dynamic characteristics are owing to the fact that the SiN
x
film blocks the excessive H plasma into the AlGaN barrier layer and reduces the implantation damage in AlGaN barrier layer.</abstract><pub>IOP Publishing</pub><doi>10.35848/1882-0786/ac7a90</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-2466-0997</orcidid><orcidid>https://orcid.org/0000-0003-0086-3351</orcidid></addata></record> |
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| ispartof | Applied physics express, 2022-07, Vol.15 (7), p.71010 |
| issn | 1882-0778 1882-0786 |
| language | eng |
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| source | Institute of Physics IOPscience extra; Institute of Physics |
| subjects | gate leakage current OFF-state breakdown voltage p-GaN gate HEMT SiNx film |
| title | The effect of SiN x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors |
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