Evidence of reduced interface states in Al 2 O 3 /AlGaN MIS structures via insertion of ex situ regrown AlGaN layer

We report on the impact of the 3 nm thick ex situ AlGaN regrown layer prior to insulator deposition on the interfacial properties of Al 2 O 3 /AlGaN/GaN metal–insulator–semiconductor (MIS) structures. MIS-capacitors (MIScaps) with regrown AlGaN layer exhibited anomalously excessive threshold voltage...

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Published in:Applied physics express 2022-10, Vol.15 (10), p.104002
Main Authors: Baratov, Ali, Kawabata, Shinsaku, Urano, Shun, Nagase, Itsuki, Ishiguro, Masaki, Maeda, Shogo, Igarashi, Takahiro, Nezu, Toi, Yatabe, Zenji, Matys, Maciej, Kachi, Tetsu, Adamowicz, Boguslawa, Wakejima, Akio, Kuzuhara, Masaaki, Yamamoto, Akio, Asubar, Joel T.
Format: Article
Language:English
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Summary:We report on the impact of the 3 nm thick ex situ AlGaN regrown layer prior to insulator deposition on the interfacial properties of Al 2 O 3 /AlGaN/GaN metal–insulator–semiconductor (MIS) structures. MIS-capacitors (MIScaps) with regrown AlGaN layer exhibited anomalously excessive threshold voltage shift compared to reference sample without regrown AlGaN, suggesting highly reduced interface states density ( D it ). Moreover, MIScaps with regrown AlGaN layer exhibited “spill-over” in the capacitance–voltage profiles, further evidencing the improved Al 2 O 3 /AlGaN interfaces. Fabricated three-terminal MIS-HEMTs with regrown AlGaN showed less hysteresis in transfer curves, enhanced maximum drain current, and increased linearity over the reference device.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ac8f13