Low magnetic damping in an ultrathin CoFeB layer deposited on a 300 mm diameter wafer at cryogenic temperature

We deposited an ultrathin CoFeB(1.1 nm) layer, which functions as a storage layer of MgO-based magnetic tunnel junctions for spin-transfer-torque (STT) magnetoresistive random-access memory (MRAM), on ϕ 300 mm wafers at 100 K and investigated its effect on the magnetization dynamics of CoFeB. We obs...

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Bibliographic Details
Published in:Applied physics express 2023-02, Vol.16 (2), p.23003
Main Authors: Sugihara, Atsushi, Ichinose, Tomohiro, Tamaru, Shingo, Yamamoto, Tatsuya, Konoto, Makoto, Nozaki, Takayuki, Yuasa, Shinji
Format: Article
Language:English
Subjects:
CoFeB
ferromagnetic resonance
magnesium oxide
magnetic damping
magnetic tunnel junction
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Summary:We deposited an ultrathin CoFeB(1.1 nm) layer, which functions as a storage layer of MgO-based magnetic tunnel junctions for spin-transfer-torque (STT) magnetoresistive random-access memory (MRAM), on ϕ 300 mm wafers at 100 K and investigated its effect on the magnetization dynamics of CoFeB. We observed clear reductions in both the inhomogeneous linewidth and total magnetic damping parameter for the CoFeB layer deposited at 100 K compared to those deposited at 300 K through the improvement in the interfacial quality. The results show that deposition at cryogenic temperatures is an effective manufacturing process for high-quality magnetic thin films with low magnetic damping.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/acbae1