Carrier density control of Sb-doped rutile-type SnO 2 thin films and fabrication of a vertical Schottky barrier diode

We report on the control of carrier density in r-SnO 2 thin films grown on isostructural r-TiO 2 substrates by doping with Sb aiming for power-electronics applications. The carrier density was tuned within a range of 3 × 10 16 –2 × 10 19 cm −3 . Two types of donors with different activation energies...

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Bibliographic Details
Published in:Applied physics express 2024-04, Vol.17 (4), p.41002
Main Authors: Takahashi, Yui, Takane, Hitoshi, Izumi, Hirokazu, Wakamatsu, Takeru, Isobe, Yuki, Kaneko, Kentaro, Tanaka, Katsuhisa
Format: Article
Language:English
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Summary:We report on the control of carrier density in r-SnO 2 thin films grown on isostructural r-TiO 2 substrates by doping with Sb aiming for power-electronics applications. The carrier density was tuned within a range of 3 × 10 16 –2 × 10 19 cm −3 . Two types of donors with different activation energies, attributed to Sb at Sn sites and oxygen vacancies, are present in the thin films. Both activation energies decrease as the concentration of Sb increases. A vertical Schottky barrier diode employing a Sb:r-SnO 2 /Nb:r-TiO 2 exhibits a clear rectifying property with a rectification ratio of 10 3 at ±1 V.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ad3d2b