Impact of Structural Aspect, Metal Gate and Channel Material on UTB-SOI-MOSFET

Ultra Thin Body Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors (UTB-SOI-MOSFETs) provide better immunity to Short Channel Effects (SCEs). But the behaviour changes at miniaturization and still the many unexplored effects need to be analysied. Here in this paper, Drain Induce...

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Bibliographic Details
Published in:International journal of innovative technology and exploring engineering 2019-11, Vol.9 (1), p.1638-1642
Main Authors: Nanda, Pradip Kumar, Das, Shiva Prasad, Panda, Soumya Ranjan, Singh, Debabrata
Format: Article
Language:English
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Summary:Ultra Thin Body Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors (UTB-SOI-MOSFETs) provide better immunity to Short Channel Effects (SCEs). But the behaviour changes at miniaturization and still the many unexplored effects need to be analysied. Here in this paper, Drain Induced Barrier Lowering (DIBL) and sub-threshold Slope (SS) variation of a n-channel UTB-SOI-MOSFET have been analyzed by changing the device structural aspects like gate length (LG), BOX thickness (tBOX) and Silicon film thickness (tSi). Also, the effect of intrinsic parameters as metal gate work function and channel material variation on DIBL and sub-threshold Slope (SS) variation has been analyzed.
ISSN:2278-3075
2278-3075
DOI:10.35940/ijitee.A4643.119119