The Influence of External Factors on Quantum Magnetic Effects in Electronic Semiconductor Structures

A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatu...

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Bibliographic Details
Published in:International journal of innovative technology and exploring engineering 2020-03, Vol.9 (5), p.1557-1563
Main Authors: Erkaboev, Ulugbek, Rakhimov, Rustamjon, Mirzaev, Jasurbek, Sayidov, Nozimjon
Format: Article
Language:English
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Summary:A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the band gap of narrow-gap semiconductors. The calculation results are compared with experimental data.
ISSN:2278-3075
2278-3075
DOI:10.35940/ijitee.E2613.039520