A Semiconductor Gamma Camera using Ultra-High Purity Germanium

• Published in: RADIOISOTOPES 1976/02/15, Vol.25(2), pp.71-75
• Main Authors: HISADA, Kinichi, KOJIMA, Kazuhiko, KOBAYASHI, Tetsuji, SUGITA, Tohru, KASHIO, Eiji
• Format: Article
• Language: eng ; jpn
• ISSN: 0033-8303; 1884-4111
• DOI: 10.3769/radioisotopes.25.2_71

Recently application of semiconductors has been noted as one of methods to obtain γ-ray image of better resolution. It is well known that semiconductors have much better energy resolution than scintillators, because they can detect incident γ-rays by transforming directly to electrical signals. And spatial resolution for detecting incident positions of γ-rays should be also improved by the constitution of electrodes cut on the surface of the semiconductor. So we tried to make a semiconductor gamma camera for developing better γ-ray images with these advantages. The semiconductor for radiation detector was based on ultrahigh purity germanium (p type, concentration of impurity was 2×1010 cm-3, and 30×30 mm2), was constructed p-i-n type, and the electrodes with 10×10 channels orthogonal matrix were cut on its surface. In this paper the properties of the semiconductor gamma camera with ultra-high purity germanium were described, for example, uniformity, resolution of images and so on. But as the detector area was very small (about 30×30 mm2), the large object was moved to be imaged partially.