Characterisation of Ga 1-x In x Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

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Bibliographic Details
Published in:AIMS materials science 2015, Vol.2 (2), p.86-96
Main Authors: P. Hayton, Jonathan, R.J. Marshall, Andrew, D. Thompson, Michael, Krier, Anthony
Format: Article
Language:English
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ISSN:2372-0484
DOI:10.3934/matersci.2015.2.86