Reactive Sputtering Process for CuIn1‐xGaxSe2 Thin Film Solar Cells

CuIn1‐xGaxSe2 (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and (In0.7Ga0.3)2Se3 targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film compo...

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Bibliographic Details
Published in:ETRI journal 2012-10, Vol.34 (5), p.779-782
Main Authors: Park, Nae‐Man, Lee, Ho Sub, Kim, Jeha
Format: Article
Language:English
Subjects:
chalcopyrite
Cu(In
Ga)Se2 (CIGS
reactive sputtering
solar cell
submicron thin film
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Summary:CuIn1‐xGaxSe2 (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and (In0.7Ga0.3)2Se3 targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800‐nm CIGS film is 8.5%.
ISSN:1225-6463
2233-7326
DOI:10.4218/etrij.12.0212.0062