Fabrication of thin body InAs-on-insulator structures by Smart Cut method with H+ implantation at room temperature

This paper demonstrates the fabrication of InAs-on-insulator (InAs-OI) structures with high crystallinity using the Smart Cut process, which combinates direct wafer bonding with a wafer splitting process by implanted H+. Controlling the implantation dose and rate allows us to produce wafer-level InA...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-04, Vol.58 (SB), p.SBBA03
Main Authors: Sumita, Kei, Kato, Kimihiko, Takenaka, Mitsuru, Takagi, Shinichi
Format: Article
Language:English
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Summary:This paper demonstrates the fabrication of InAs-on-insulator (InAs-OI) structures with high crystallinity using the Smart Cut process, which combinates direct wafer bonding with a wafer splitting process by implanted H+. Controlling the implantation dose and rate allows us to produce wafer-level InAs-OI structures on Si substrates by H+ implantation at room temperature, which can be performed in standard implantation equipment. It is found that (111) InAs-OI has a much flatter surface after splitting than (100) one. After thinning by using CMP and wet etching, 15 nm thick InAs-OI structures are realized with the high thickness uniformity.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/aafa68