Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer

The direct growth of a III-V compound semiconductor on Si(001) is an unsolved problem for monolithically integrated photonic devices on the Si platform. Here, we report the growth of a high-quality GaAs layer on on-axis Si(001) substrates by MBE. A single domain GaAs layer was grown on top of a AlGa...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-04, Vol.58 (SB), p.SBBE07
Main Authors: Kwoen, Jinkwan, Lee, Joohang, Watanabe, Katsuyuki, Arakawa, Yasuhiko
Format: Article
Language:English
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Summary:The direct growth of a III-V compound semiconductor on Si(001) is an unsolved problem for monolithically integrated photonic devices on the Si platform. Here, we report the growth of a high-quality GaAs layer on on-axis Si(001) substrates by MBE. A single domain GaAs layer was grown on top of a AlGaAs nucleation layer on a Si(001) substrate. By optimizing the Al content of the nucleation layer, anti-phase domains were self-eliminated at the GaAs layer. This result represents a key step towards the realization of monolithically integration of III-V devices on the Si platform using direct epitaxial growth.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/aaffc2