Low temperature epitaxial growth of Ge:B and Ge 0.99 Sn 0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-04, Vol.58 (SB), p.SBBA04
Main Authors: Vohra, Anurag, Porret, Clement, Kohen, David, Folkersma, Steven, Bogdanowicz, Janusz, Schaekers, Marc, Tolle, John, Hikavyy, Andriy, Capogreco, Elena, Witters, Liesbeth, Langer, Robert, Vandervorst, Wilfried, Loo, Roger
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab027b