Highly sensitive spintronic strain-gauge sensor and Spin-MEMS microphone

Strain-gauge sensors consisting of magnetic tunnel junctions (MTJs) have attracted attention because of their high strain sensitivity based on a novel strain sensing scheme different from the piezoresistive effect. To maximize the strain sensitivity of these spintronic strain-gauge sensors (Spin-SGS...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-06, Vol.58 (SD), p.SD0802
Main Authors: Fuji, Yoshihiko, Higashi, Yoshihiro, Kaji, Shiori, Masunishi, Kei, Nagata, Tomohiko, Yuzawa, Akiko, Okamoto, Kazuaki, Baba, Shotaro, Ono, Tomio, Hara, Michiko
Format: Article
Language:English
Subjects:
Coercivity
Magnetoresistance
Magnetoresistivity
Magnetostriction
Microelectromechanical systems
Micromachining
Sensitivity
Sensors
Strain gauges
Tunnel junctions
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Summary:Strain-gauge sensors consisting of magnetic tunnel junctions (MTJs) have attracted attention because of their high strain sensitivity based on a novel strain sensing scheme different from the piezoresistive effect. To maximize the strain sensitivity of these spintronic strain-gauge sensors (Spin-SGSs), we previously developed an MTJ film with magnetostrictive material that acutely rotates with strain. This review presents a Spin-SGS with a high gauge factor in excess of 5000, which was achieved by adopting an amorphous FeB-based sensing layer with high magnetostriction and low coercivity in a high magnetoresistance Mg-O barrier MTJ. We also investigated the feasibility of using this Spin-SGS in microelectromechanical system (MEMS) sensor devices. This review also describes the properties of a "Spintronic MEMS (Spin-MEMS) microphone," in which Spin-SGSs are integrated onto a bulk micromachined diaphragm.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab12c0