Enhanced hardness of nanocarbon films deposited on cemented tungsten carbide substrates by coaxial arc plasma deposition owing to employing silicon-doped graphite targets

1 at% Si-doped nanocrystalline diamond/amorphous carbon (NCD/a-C) composite films were deposited on cemented carbide (WC-Co) substrates by coaxial arc plasma deposition. The doping of Si evidently degraded the hardness of films directly deposited on the substrates due to catalytic effects of diffuse...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-07, Vol.58 (7), p.75507
Main Authors: Egiza, Mohamed, Murasawa, Kouki, Ali, Ali M., Fukui, Yasuo, Gonda, Hidenobu, Sakurai, Masatoshi, Yoshitake, Tsuyoshi
Format: Article
Language:English
Subjects:
Arc deposition
Buffer layers
Catalysis
Cemented carbides
Diamonds
Diffusion effects
Diffusion layers
Doping
Hardness
Plasma
Plasma deposition
Silicon
Substrates
Surface hardness
Tungsten carbide
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:1 at% Si-doped nanocrystalline diamond/amorphous carbon (NCD/a-C) composite films were deposited on cemented carbide (WC-Co) substrates by coaxial arc plasma deposition. The doping of Si evidently degraded the hardness of films directly deposited on the substrates due to catalytic effects of diffused Co atoms into the films. On the other hand, by employing undoped NCD/a-C buffer layers, the Co diffusion was suppressed and the hardness was enhanced from 42 to 60 GPa. It was found that the Si doping enhances the formation of C-C sp3 bonds, which resulted in the hardness enhancement in the case of suppressing the Co diffusion by insertion of undoped NCD/a-C buffer layers.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab289f