Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation

Micro-light-emitting-diodes ( LEDs) with size-independent peak external quantum efficiency behavior was demonstrated from 10 × 10 m2 to 100 × 100 m2 by employing a combination of chemical treatment and atomic-layer deposition (ALD) sidewall passivation. The chemical treatment and sidewall passivatio...

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Bibliographic Details
Published in:Applied physics express 2019-09, Vol.12 (9), p.97004
Main Authors: Wong, Matthew S., Lee, Changmin, Myers, Daniel J., Hwang, David, Kearns, Jared A., Li, Thomas, Speck, James S., Nakamura, Shuji, DenBaars, Steven P.
Format: Article
Language:English
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Summary:Micro-light-emitting-diodes ( LEDs) with size-independent peak external quantum efficiency behavior was demonstrated from 10 × 10 m2 to 100 × 100 m2 by employing a combination of chemical treatment and atomic-layer deposition (ALD) sidewall passivation. The chemical treatment and sidewall passivation improved the ideality factors of LEDs from 3.4 to 2.5. The results from the combination of chemical treatment and ALD sidewall passivation suggest the issue of size dependent efficiency can be resolved with proper sidewall treatments after dry etching.
ISSN:1882-0778
1882-0786
DOI:10.7567/1882-0786/ab3949