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Impact of 3D growth and SiN x interlayer on the quality of (11–22) semi-polar GaN grown on m -plane sapphire

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Bibliographic Details
Published in:	Applied physics express 2019-11, Vol.12 (11), p.115501
Main Authors:	Xing, Kun, Chen, Shirong, Tao, Xiao, Lee, Chiaan, Wang, Jiangtao, Xu, Qi, Liang, Huaguo
Format:	Article
Language:	English
Citations:	Items that this one cites Items that cite this one
Online Access:	Get full text
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