Facile approaches to prepare n-ZnO/(i-ZnO)/p-GaN heterojunction light-emitting diodes with white-light-electroluminescence

White-light-emitting diode (LED) with effective energy conservation and long service life could be employed in numerous applications. In this study, the high-performance n-ZnO films were first prepared via pulsed laser deposition on p-GaN substrates and then the n-ZnO/p-GaN heterojunction LED was fa...

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Bibliographic Details
Published in:Applied physics express 2019-12, Vol.12 (12), p.121004
Main Authors: Huo, Chunqing, Lu, Youming, Zeng, Hua, Cao, Peijiang, Han, Shun, Liu, Wenjun, Jia, Fang, Zeng, Yuxiang, Liu, Xinke, Xu, Wangying, Zhu, Deliang
Format: Article
Language:English
Subjects:
a semi-insulating i-ZnO layer
blue and yellow light emission and emission intensity
n-ZnO/p-GaN heterojunction
oxygen pressures
p-GaN/i-ZnO/n-ZnO heterojunction
white light-emitting diodes
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Summary:White-light-emitting diode (LED) with effective energy conservation and long service life could be employed in numerous applications. In this study, the high-performance n-ZnO films were first prepared via pulsed laser deposition on p-GaN substrates and then the n-ZnO/p-GaN heterojunction LED was fabricated. This LED exhibits blue and yellow light emission, and their emission intensities can be tuned by adjustment of the fabrication parameters (e.g. oxygen pressure) and/or by introduction of a semi-insulating i-ZnO layer to form a p-GaN/i-ZnO/n-ZnO heterojunction. Thus, a facile approach has been proposed for the preparation of white LED.
ISSN:1882-0778
1882-0786
DOI:10.7567/1882-0786/ab50de