Deep-ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells

Three-dimensional (3D) AlGaN/AlN quantum wells (QWs) were fabricated on trench-patterned AlN templates using a regrowth technique based on metalorganic vapor phase epitaxy. The 3D structures are composed of planar (0001) facets, facets, and misoriented (0001) planes with bunched steps. Cathodolumine...

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Bibliographic Details
Published in:Applied physics express 2017-03, Vol.10 (3), p.31001
Main Authors: Kataoka, Ken, Funato, Mitsuru, Kawakami, Yoichi
Format: Article
Language:English
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Summary:Three-dimensional (3D) AlGaN/AlN quantum wells (QWs) were fabricated on trench-patterned AlN templates using a regrowth technique based on metalorganic vapor phase epitaxy. The 3D structures are composed of planar (0001) facets, facets, and misoriented (0001) planes with bunched steps. Cathodoluminescence spectroscopy revealed double-peaked deep-ultraviolet (DUV) emissions: the shorter-wavelength emission was attributed to the (0001) facets, whereas the longer-wavelength emission arose from bunched step structures located around the bottom corner of the AlN trench, a region in which the AlGaN QWs possessed a relatively high Ga concentration and a thick well width compared with planar (0001) QWs.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.10.031001