Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV−) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts o...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics express 2017-05, Vol.10 (5), p.55503
Main Authors: Kageura, Taisuke, Kato, Kanami, Yamano, Hayate, Suaebah, Evi, Kajiya, Miki, Kawai, Sora, Inaba, Masafumi, Tanii, Takashi, Haruyama, Moriyoshi, Yamada, Keisuke, Onoda, Shinobu, Kada, Wataru, Hanaizumi, Osamu, Teraji, Tokuyuki, Isoya, Junichi, Kono, Shozo, Kawarada, Hiroshi
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV−) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 ± 0.06 and 0.46 ± 0.03 have been obtained for single NV− centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV− centers near the surface compared with the states obtained for alternatively terminated surfaces.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.10.055503