InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

High-performance InGaN-channel high-electron-mobility transistors (HEMTs) are fabricated and investigated in detail. The transconductance exhibits a high stability over a wide range of gate voltages, indicating excellent operation linearity. The relative saturation output current densities are 81 an...

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Bibliographic Details
Published in:Applied physics express 2018-09, Vol.11 (9), p.94101
Main Authors: Zhang, Yachao, Zhang, Tao, Zhou, Hong, Li, Yao, Xu, Shengrui, Bao, Weimin, Zhang, Jincheng, Hao, Yue
Format: Article
Language:English
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Summary:High-performance InGaN-channel high-electron-mobility transistors (HEMTs) are fabricated and investigated in detail. The transconductance exhibits a high stability over a wide range of gate voltages, indicating excellent operation linearity. The relative saturation output current densities are 81 and 68% when the temperature increases to 400 and 500 K, respectively, with respect to the value of 1128.2 mA/mm at 300 K. In addition, the breakdown voltage reaches 187 V at 300 K, which is comparable to that of a GaN-channel HEMT. The presented results demonstrate the large potentials of the InGaN-channel HEMT in high-frequency power applications.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.11.094101