InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure

High-efficiency InGaN light-emitting diode (LED) with an air-channel structure and a nanoporous structure was fabricated. The air-channel structure was formed through an epitaxial regrowth process on a dry-etched undoped GaN nanorod structure. The GaN:Si nanoporous structure embedded in treated LED...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics express 2013-01, Vol.6 (1), p.012103-012103-3
Main Authors: Jiang, Ren-Hao, Lin, Chia-Feng, Yang, Chung-Chieh, Fan, Feng-Hsu, Huang, Yu-Chieh, Tseng, Wang-Po, Cheng, Po-Fu, Wu, Kaun-Chun, Wang, Jing-Hao
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:High-efficiency InGaN light-emitting diode (LED) with an air-channel structure and a nanoporous structure was fabricated. The air-channel structure was formed through an epitaxial regrowth process on a dry-etched undoped GaN nanorod structure. The GaN:Si nanoporous structure embedded in treated LED structures was fabricated through a photoelectrochemical wet etching process in an oxalic acid solution. Light output powers were enhanced 1.48- and 1.75-fold for the LEDs with an air-channel structure and with a nanoporous/air-channel structure, respectively, in comparison with that of a conventional LED structure. The air-channel structure and the nanoporous GaN:Si structure in the treated LED structures provided high-light-extraction structures.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.6.012103