Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier

An ultrathin AlN layer is inserted between the GaN channel and buffer in the fabrication of deep-submicrometer AlGaN/GaN high-electron-mobility transistors (HEMTs). The wide bandgap of AlN establishes a high back barrier and thus enhances the confinement of two-dimensional electron gas under high dr...

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Bibliographic Details
Published in:Applied physics express 2013-05, Vol.6 (5), p.051201-051201-4
Main Authors: Kong, Xin, Wei, Ke, Liu, Guoguo, Liu, Xinyu, Wang, Cuimei, Wang, Xiaoliang
Format: Article
Language:English
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Summary:An ultrathin AlN layer is inserted between the GaN channel and buffer in the fabrication of deep-submicrometer AlGaN/GaN high-electron-mobility transistors (HEMTs). The wide bandgap of AlN establishes a high back barrier and thus enhances the confinement of two-dimensional electron gas under high drain bias voltages. Owning to the effective suppression of short-channel effects in the device with a highly scaled gate length, the fabricated AlN back barrier HEMTs show better pinch-off quality, lower subthreshold current, lower drain-induced barrier lowering factor, and better high-frequency response than the reference device without an AlN back barrier.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.6.051201