Band anticrossing in ZnOSe highly mismatched alloy

ZnOxSe1−x layers with x ≤ 1.35% were studied by photoreflectance at 80 K. Careful analysis of the PR spectra allowed the identification of the optical transitions from the valence band to the E− and E+ subbands originating from the band anticrossing interaction between the resonant oxygen level and...

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Bibliographic Details
Published in:Applied physics express 2014-07, Vol.7 (7), p.71202
Main Authors: Welna, Monika, Kudrawiec, Robert, Nabetani, Yu, Walukiewicz, Wladyslaw
Format: Article
Language:English
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Summary:ZnOxSe1−x layers with x ≤ 1.35% were studied by photoreflectance at 80 K. Careful analysis of the PR spectra allowed the identification of the optical transitions from the valence band to the E− and E+ subbands originating from the band anticrossing interaction between the resonant oxygen level and the conduction band of the ZnSe host. In addition, it was possible to resolve a strain-induced splitting of the valence band into the heavy- and light-hole subbands. The strain changes from compressive to tensile with increasing oxygen concentration for these ZnOxSe1−x layers grown on a GaAs substrate.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.7.071202