Demonstrating 30-nm spatial resolution of three-multilayer-mirror objective for extreme ultraviolet microscopy: Imaging test by observing lithography mask

To confirm the high spatial resolution expected in extreme ultraviolet (EUV) microscopy, fine grating patterns with a half-pitch of less than 100 nm on a lithography mask were imaged using a full-field microscope based on a multilayer-mirror objective. When the tilted illumination technique is appli...

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Published in:Applied physics express 2014-10, Vol.7 (10), p.102502
Main Authors: Toyoda, Mitsunori, Yamasoe, Kenjiro, Tokimasa, Akifumi, Uchida, Kentaro, Harada, Tetsuo, Terasawa, Tsuneo, Amano, Tsuyoshi, Watanabe, Takeo, Yanagihara, Mihiro, Kinoshita, Hiroo
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container_issue 10
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container_title Applied physics express
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creator Toyoda, Mitsunori
Yamasoe, Kenjiro
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Yanagihara, Mihiro
Kinoshita, Hiroo
description To confirm the high spatial resolution expected in extreme ultraviolet (EUV) microscopy, fine grating patterns with a half-pitch of less than 100 nm on a lithography mask were imaged using a full-field microscope based on a multilayer-mirror objective. When the tilted illumination technique is applied to this novel imaging system, a spatial resolution better than 20 nm can be expected at a wavelength of 13.5 nm. We demonstrated high resolution via EUV reflection images of test patterns with a half-pitch between 30 and 80 nm.
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title Demonstrating 30-nm spatial resolution of three-multilayer-mirror objective for extreme ultraviolet microscopy: Imaging test by observing lithography mask
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