Uniform ZnO epitaxial films formed at atmospheric pressure by high-speed rotation-type mist chemical vapor deposition

Uniform ZnO epitaxial films were formed on 2-in.-diameter m-plane sapphire substrates by high-speed rotation-type mist chemical vapor deposition at atmospheric pressure, without using any vacuum equipment. The ZnO films were characterized by scanning electron microscopy, X-ray diffraction in θ-2θ an...

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Bibliographic Details
Published in:Applied physics express 2015-12, Vol.8 (12), p.125502
Main Authors: Tanoue, Hironobu, Taniguchi, Takuya, Wada, Shohei, Yamamoto, Shinya, Nakamura, Shohei, Naka, Yoshihiro, Yoshikawa, Hiroyuki, Munekata, Mizue, Nagaoka, Shoji, Nakamura, Yusui
Format: Article
Language:English
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Summary:Uniform ZnO epitaxial films were formed on 2-in.-diameter m-plane sapphire substrates by high-speed rotation-type mist chemical vapor deposition at atmospheric pressure, without using any vacuum equipment. The ZnO films were characterized by scanning electron microscopy, X-ray diffraction in θ-2θ and φ scanning modes, electron backscatter diffraction, and room-temperature photoluminescence measurements. Experimental results show that m-plane ZnO films were epitaxially grown on the m-plane sapphire substrates with high uniformity of not only thickness but also crystallinity and optical properties. These results will promote the progress of ZnO-based devices such as light-emitting diodes.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.8.125502